Reactive-Ion Etching ( RIE )
Reactive-ion etching (RIE) is an etching technology used in microfabrication.
RIE is a type of dry etching and it uses chemically reactive plasma to remove material deposited on wafers.
High-energy ions from the plasma attack the wafer surface and react with it.
RIE is a type of dry etching and it uses chemically reactive plasma to remove material deposited on wafers.
High-energy ions from the plasma attack the wafer surface and react with it.
A typical RIE system consists of a cylindrical vacuum chamber, with a wafer platter situated in the bottom portion of the chamber.
The wafer platter is electrically isolated from the rest of the chamber. Gas enters through small inlets in the top of the chamber, and exits to the vacuum pump system through the bottom. The types and amount of gas used vary depending upon the etch process.
Gas pressure is typically maintained in a range between a few millitorr and a few hundred millitorr by adjusting gas flow rates and/or adjusting an exhaust orifice.
The wafer platter is electrically isolated from the rest of the chamber. Gas enters through small inlets in the top of the chamber, and exits to the vacuum pump system through the bottom. The types and amount of gas used vary depending upon the etch process.
Gas pressure is typically maintained in a range between a few millitorr and a few hundred millitorr by adjusting gas flow rates and/or adjusting an exhaust orifice.
